SiC Power Device Fabs — Equipment Requirements and Used Market Options

Silicon carbide (SiC) power devices are experiencing explosive growth driven by electric vehicles, renewable energy, and industrial applications. Unlike standard silicon CMOS, SiC manufacturing requires specialized equipment capable of handling the material's unique properties—higher thermal budgets, harder substrate material, and different defect profiles. This guide covers the equipment requirements for SiC fabs and the availability of used tools in this rapidly evolving market.

SiC vs. Silicon: Key Process Differences

SiC manufacturing differs from silicon in several critical ways that drive equipment selection:

Thermal Budget

• SiC oxidation: Requires 1200-1400°C (vs. 900-1100°C for Si)
• Activation anneals: 1600-1700°C for dopant activation (vs. 1000-1100°C for Si)
• Implant damage anneal: 1500-1700°C required

Material Hardness

• Mohs hardness: SiC = 9.5 (diamond = 10, Si = 6.5)
• Impact: Standard CMP and grinding equipment requires modification or replacement
• Wafer handling: Specialized carriers and handling systems needed

Crystal Structure

• Polytypes: 4H-SiC dominates power devices; 6H-SiC for optoelectronics
• Defect sensitivity: SiC is more sensitive to certain defect types (TSDs, BPDs)
• Inspection requirements: Specialized defect detection systems

SiC Epitaxy Reactors

Epitaxial growth is the foundation of SiC device manufacturing. The used market for SiC epitaxy equipment is limited but growing as early adopters upgrade.

Horizontal Hot-Wall Reactors

Aixtron G5WW (Warm-Wall)

• Configuration: Planetary multi-wafer (3×150mm or 6×100mm)
• Temperature: 1600-1700°C
• Growth rate: 5-10 µm/hour
• Used market price (2026): $800,000 - $1,500,000

The G5WW is the workhorse of SiC epitaxy. When evaluating used units:

• Verify susceptor condition (graphite degradation at high temperatures)
• Check gas injection system for corrosion
• Confirm temperature uniformity across all planetary positions
• Review growth history (n-type vs. p-type affects chamber conditioning)

Veeco (formerly LPE) PE106/PE206

• Configuration: Single-wafer or multi-wafer
• Temperature: 1650°C+
• Used market price (2026): $600,000 - $1,200,000

Veeco's acquisition of LPE expanded their SiC epitaxy offerings. Used LPE systems offer good value for entry-level SiC production.

Vertical Flow Reactors

Nuflare VC-7500 / VC-8500

• Configuration: Single-wafer vertical flow
• Temperature: 1700°C+
• Specialty: Ultra-high-purity epitaxy for advanced devices
• Used market price (2026): $1,200,000 - $2,500,000

Nuflare systems command premium prices due to their reputation for defect control. Limited availability on the used market.

Used Market Notes

SiC epitaxy equipment availability is constrained because:

• Most SiC fabs are still in expansion mode, not retiring equipment
• Tool lifespans are long (10-15 years) given the limited installed base
• New entrants often buy new equipment for warranty and support

Recommendation: For used SiC epitaxy, focus on Aixtron G3WW/G4WW/G5WW platforms with documented maintenance history.

Ion Implantation

SiC requires high-temperature implantation or post-implant annealing at extreme temperatures. Standard silicon implanters can be adapted with modifications.

High-Current Implanters

Varian VIISta 810/810E

• Energy range: 10-200 keV (configurable)
• Dose range: 1E11 - 1E16 atoms/cm²
• Wafer heating: Up to 600°C (hot implant option)
• Used market price (2026): $400,000 - $800,000

The VIISta 810 series can be configured for SiC with:

• High-temperature end stations (critical for preventing amorphization)
• Aluminum and nitrogen source configurations
• Modified beam optics for heavier ions

Axcelis (Varian) NovaStar / GSD Series

• Energy range: 10-500+ keV
• SiC compatibility: Hot implant and high-dose capabilities
• Used market price (2026): $350,000 - $700,000

Axcelis implanters (formerly Varian's ion implantation division) are widely used for SiC. The NovaStar series offers good throughput for power device production.

Medium-Current Implanters

SEN / Sumitomo Eaton Nova

• Configuration: Medium-current, precision implantation
• SiC applications: Threshold adjustment, well formation
• Used market price (2026): $250,000 - $500,000

Equipment Modifications for SiC

When buying used implanters for SiC:

• Verify high-temperature end station capability (500°C+ wafer temperature)
• Confirm aluminum source availability (p-type doping)
• Check Faraday cup calibration for heavy ions (Al, B)
• Ensure beam line components rated for high-dose operation

High-Temperature Furnaces

SiC processing requires furnaces capable of sustained operation at 1200-1700°C—well beyond standard silicon thermal processing equipment.

Oxidation and Annealing Furnaces

Centrotherm VLO Series

• Temperature range: Up to 1700°C
• Atmosphere: O₂, N₂, Ar, NO (nitridation)
• Configuration: Vertical or horizontal
• Used market price (2026): $300,000 - $600,000

Centrotherm specializes in high-temperature SiC processing. Their furnaces support:

• Gate oxidation (1200-1350°C)
• Post-implant anneal (1600-1700°C)
• Nitridation processes

Thermco / Bruce / Tystar High-Temp Models

• Temperature range: 1200-1400°C (standard high-temp)
• SiC limitation: May require modification for 1600°C+ anneals
• Used market price (2026): $150,000 - $350,000

Standard high-temperature furnaces can handle SiC oxidation but may require:

• Susceptor material upgrades (SiC-coated graphite)
• Heating element replacement (for 1600°C+ operation)
• Process tube material verification (fused quartz vs. silicon carbide)

RTP (Rapid Thermal Processing)

Applied Materials Centura RTP

• Temperature: Up to 1200°C (standard), 1300°C+ (modified)
• SiC applications: Limited—RTP struggles with SiC's thermal mass
• Used market price (2026): $200,000 - $400,000

RTP is less commonly used for SiC due to the material's thermal properties. Furnace annealing dominates SiC thermal processing.

Etch Equipment

SiC etching requires high ion density and energy due to the material's chemical stability. Standard silicon etch tools can be adapted with process modifications.

ICP (Inductively Coupled Plasma) Etch

Lam Research 2300 Series (Modified)

• Configuration: Kiyo, Versys, or Flex platforms
• SiC etch rate: 0.5-2 µm/minute (depending on chemistry)
• Chemistries: SF₆/O₂, NF₃-based, Cl₂/BCl₃
• Used market price (2026): $350,000 - $700,000

The Lam 2300 series can etch SiC with:

• High-density ICP source (2-3 MHz)
• Biased chuck for ion energy control
• Hard mask compatibility (Al, Ni, or oxide)

TEL Tactras / Unity

• SiC capability: With process recipe development
• Used market price (2026): $400,000 - $800,000

TEL etchers require more extensive process development for SiC but offer good uniformity once qualified.

DRIE (Deep Reactive Ion Etch)

SPTS / STS Pegasus

• Configuration: Bosch process capable
• SiC etch: Achieves high aspect ratios
• Used market price (2026): $250,000 - $500,000

DRIE systems designed for MEMS can be adapted for SiC power device structures (trenches, mesa isolation).

Used Etcher Evaluation for SiC

When sourcing used etch equipment for SiC:

• Verify ICP source power (≥2 kW preferred for SiC)
• Check chuck cooling capacity (SiC etch generates significant heat)
• Confirm chamber materials compatible with fluorine chemistries
• Review spare parts availability for high-wear components (quartz windows, rings)

CMP (Chemical Mechanical Planarization)

SiC CMP is challenging due to material hardness. Specialized equipment and consumables are required.

SiC-Specific CMP Systems

Strasbaugh 6EG / 7AF

• Configuration: Single-wafer or multi-wafer
• SiC modifications: Hard platen, diamond abrasive pads
• Used market price (2026): $180,000 - $350,000

Strasbaugh polishers are commonly adapted for SiC with:

• Hard polyurethane pads (vs. soft pads for Si)
• Diamond slurries (vs. silica/ceria for Si)
• Higher down-force capabilities

AMAT Reflexion / Mirra (Modified)

• SiC limitation: Standard configuration not suitable
• Modification cost: $100,000+ for SiC capability
• Used market price (2026): $300,000 - $600,000 (before modification)

Applied Materials polishers can be modified for SiC but require significant investment in hard platens and process development.

Used Market Reality

Dedicated SiC CMP equipment is rare on the used market. Most SiC fabs:

• Buy new SiC-specific polishers
• Modify existing silicon polishers
• Outsource CMP to specialized providers

Inspection and Metrology

SiC substrates and epitaxy have unique defect types requiring specialized inspection.

Defect Inspection

KLA-Tencor SurfScan for SiC

• Configuration: SP3, SP5 models with SiC recipes
• Defect types: TSDs (Threading Screw Dislocations), BPDs (Basal Plane Dislocations), scratches
• Used market price (2026): $400,000 - $800,000

Standard SurfScan tools can inspect SiC with appropriate recipe development, though sensitivity to certain defect types differs from silicon.

SICA (SiC-specific microscopes)

• Technology: UV fluorescence, polarized light
• Specialty: SiC defect visualization
• Used market price (2026): $150,000 - $300,000

SICA systems from vendors like Lumasense or custom-built tools provide specialized SiC defect detection.

Metrology

Filmetrics / KLA Filmetrics F50

• Application: SiC epitaxy thickness measurement
• Used market price (2026): $80,000 - $150,000

X-ray Diffractometers (XRD)

• Application: Polytype identification, strain measurement
• Used market price (2026): $200,000 - $500,000

XRD is essential for SiC quality verification, particularly for substrate and epitaxy characterization.

Which Steps Require SiC-Specific Tools?

| Process Step | SiC-Specific Required? | Notes | |--------------|------------------------|-------| | Epitaxy | Yes | Standard Si epitaxy cannot reach required temperatures | | Ion Implant | No* | High-temp end station required, but base tool is standard | | Annealing | Yes | Standard Si furnaces cannot reach 1600°C+ | | Etch | No | *Standard ICP etchers work with process development | | Oxidation | Yes | High-temp oxidation furnaces required | | CMP | Yes | Standard Si CMP too slow for SiC hardness | | Lithography | No | Standard i-line/KrF steppers work fine | | Metallization | No | Standard sputtering/evaporation systems | | Passivation | No | Standard PECVD systems |

Used Market Availability Summary

| Equipment Type | Availability | Price Range (Used) | Recommendation | |----------------|--------------|-------------------|----------------| | SiC Epitaxy | Poor | $600K-$2.5M | Buy new if possible; used G5WW if available | | Ion Implanter | Good | $250K-$800K | Standard tools work; verify hot implant | | High-Temp Furnace | Fair | $150K-$600K | Centrotherm preferred; modify standard furnaces | | Etch System | Good | $250K-$800K | Lam 2300 series with process development | | CMP | Poor | $180K-$350K | Modify standard polishers or buy new | | Inspection | Fair | $150K-$800K | Standard tools with SiC recipes |

FAQ

Q: Can I use standard silicon equipment for SiC manufacturing?

A: Partially. Lithography, metallization, and cleaning can use standard silicon equipment. However, epitaxy, high-temperature annealing (>1400°C), and CMP require SiC-specific or heavily modified equipment. Ion implantation needs high-temperature end stations. Budget 30-50% premium for SiC-capable equipment vs. standard silicon tools.

Q: What is the biggest equipment challenge for new SiC fabs?

A: Epitaxy is the most critical and expensive challenge. SiC epitaxy reactors have limited used market availability, long lead times for new equipment (12-18 months), and high capital cost ($1.5M+ for multi-wafer systems). Many new entrants partner with established epitaxy houses or start with single-wafer systems.

Q: How does SiC wafer size affect equipment selection?

A: The SiC industry is transitioning from 100mm (4-inch) to 150mm (6-inch) wafers. 150mm is now standard for new power device production. Ensure all equipment handles your target wafer size—many older tools are 100mm-only. 200mm SiC is emerging but equipment availability is extremely limited.

Q: Should I buy new or used for SiC equipment?

A: For SiC-specific equipment (epitaxy, high-temp furnaces), new is often preferred due to limited used availability and warranty needs. For adaptable equipment (implanters, etchers, lithography), used offers good value if you verify SiC compatibility. Budget for process development regardless—SiC recipes differ significantly from silicon.

Conclusion

SiC power device manufacturing requires a hybrid approach: SiC-specific tools for epitaxy and high-temperature processing, adapted standard equipment for implant, etch, and lithography. The used market for SiC-specific equipment remains constrained as the industry expands, but opportunities exist for adaptable tools and early-generation SiC systems. Focus your used equipment search on ion implanters, etch systems, and modified furnaces while planning new equipment purchases for epitaxy and CMP.

Looking for SiC manufacturing equipment? Contact Caladan Semi for assistance sourcing ion implanters, etch systems, high-temperature furnaces, and inspection tools suitable for silicon carbide production.