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CVD

Tungsten CVD for Contact/Via Fill

Related parts: Showerheads, MFCs (WF6, SiH4, H2), heater assemblies, gas purifiers

Tungsten CVD for Contact/Via Fill

Category: CVD

Process Overview

Tungsten Chemical Vapor Deposition (CVD) for Contact/Via Fill is a critical step in semiconductor manufacturing used to deposit conformal tungsten films that electrically connect transistors to interconnect layers. This process addresses the challenges of filling high-aspect-ratio features (e.g., 10:1 via/contacts) without voids, ensuring low-resistance pathways essential for advanced logic and memory devices. Tungsten’s low resistivity (≈ 5.6 μΩ·cm) and excellent step-coverage make it ideal for sub-7nm nodes, where copper electroplating is impractical for such small features. In data center chip production, reliable via fill is critical for maintaining signal integrity in high-performance compute and networking architectures.

The process typically uses tungsten hexafluoride (WF₆) as the precursor, silicon hydride (SiH₄) as a reducing agent, and hydrogen (H₂) as a carrier gas. Deposition occurs in a low-pressure CVD chamber, where precise control of gas flows, temperature, and pressure ensures uniform tungsten nucleation and growth.


Key Process Parameters

| Parameter | Typical Value |
|-------------------|----------------------------------------|
| Temperature | 350°C ± 10°C (per SEMI C17) |
| Chamber Pressure | 5–10 Torr |
| WF₆ Flow Rate | 20–80 sccm |
| SiH₄ Flow Rate | 100–300 sccm |
| H₂ Flow Rate | 500–1000 sccm |
| Deposition Rate | 100–300 nm/min (aspect ratio > 8:1) |


Equipment & Parts Required

  1. Showerheads

    • Role: Uniform distribution of WF₆, SiH₄, and H₂ across the wafer surface to ensure consistent film thickness.
    • Caladan Link: Caladan’s fluorine-resistant showerheads (e.g., ALD-optimized models) prevent clogging from WF₆ decomposition byproducts.
  2. Mass Flow Controllers (MFCs)

    • Role: Precise control of gas flows (±1% accuracy) to maintain stoichiometric ratios and avoid tungsten over-deposition or voids.
    • Caladan Link: High-precision MFCs for WF₆ (toxic, corrosive gas) and SiH₄ (pyrophoric) ensure safety and process stability.
  3. Heater Assemblies

    • Role: Maintain ±2°C wafer temperature uniformity to prevent thermal gradients that cause non-uniform deposition.
    • Caladnan Link: Rapid thermal cycling heater modules (compliant with SEMI E142) enable tight process control.
  4. Gas Purifiers

    • Role: Remove oxygen and moisture from WF₆ and SiH₄ lines to prevent oxide byproducts that degrade film quality.
    • Caladan Link: ISO 14644-1 Class 1 purifiers for ultra-high-purity gas delivery.

Common Issues & Troubleshooting

  1. Non-Uniform Deposition

    • Cause: Clogged showerhead orifice or uneven gas distribution.
    • Fix: Replace showerhead (every 10k–15k cycles) and perform O₂ plasma cleaning.
  2. Particle Contamination

    • Cause: Degraded gas purifier filters or WF₆ line leaks.
    • Fix: Replace purifier filters (every 6 months) and check WF₆ line integrity with leak detectors.
  3. Incomplete Via Fill

    • Cause: Suboptimal temperature (±5°C deviation) or low SiH₄ flow.
    • Fix: Calibrate heater assemblies and verify MFC SiH₄ output.

Frequently Asked Questions

Q: What is the typical tungsten deposition rate for via fill?
A: "The deposition rate ranges from 100–300 nm/min, depending on chamber design and gas ratios, with 200 nm/min being standard for 5nm node via fill."

Q: Why is hydrogen used in tungsten CVD?
A: "Hydrogen acts as both a carrier gas and a reducing agent, ensuring WF₆ is fully converted to metallic tungsten while minimizing fluoride byproducts."

Q: How does temperature affect tungsten film quality?
A: "A ±2°C deviation from 350°C can increase void formation by 30%, per SEMI C17 guidelines, due to altered surface diffusion kinetics."

Q: What industry standards govern tungsten CVD gas purity?
A: "ISO 14644-1 and SEMI F22 specify < 0.1 ppm oxygen and moisture in WF₆/SiH₄ lines to ensure defect-free films."

Q: Can tungsten CVD be used for back-end-of-line (BEOL) interconnects?
A: "No—tungsten CVD is reserved for via/contacts; BEOL uses physical vapor deposition (PVD) for wider copper lines due to cost and throughput tradeoffs."


Parts for This Process

Looking for parts to support this process? Caladan Semi stocks used and refurbished components including: Showerheads, MFCs (WF6, SiH4, H2), heater assemblies, gas purifiers.

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Parts for This Process

Caladan stocks used and refurbished parts for tungsten cvd for contact/via fill equipment — tested, inspected, and ready to ship.

ShowerheadsMFCs (WF6SiH4H2)heater assembliesgas purifiers
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